1) Glass-sealed envelope for high reliability. (MSD) 2) Small pitch enables insertion on PCBs. 3) Low VF and low IR. φ0.4±0.1
29±1
2.7±0.3
29±1
φ1.8±0.2
!Construction Silicon epitaxial planar
ROHM : MSD EIAJ :.
JEDEC : DO-34
S Product identification number 2.
is stamped on body of main unit. !Absolute maximum ratings (Ta=25°C)
Parameter
Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current∗ Junction temperature Storage temperature
∗.
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RB721Q-40
Diodes
Schottky barrier diode
RB721Q-40
!Applications High speed switching !External dimensions (Units : mm)
CATHODE BAND (BLACK)
!Features 1) Glass-sealed envelope for high reliability. (MSD) 2) Small pitch enables insertion on PCBs. 3) Low VF and low IR.
φ0.4±0.1
29±1
2.7±0.3
29±1
φ1.8±0.2
!Construction Silicon epitaxial planar
ROHM : MSD EIAJ : − JEDEC : DO-34
S Product identification number 2 − is stamped on body of main unit.