Datasheet4U Logo Datasheet4U.com

DS1645Y - Partitionable 1024K NV SRAM

Key Features

  • 10 years minimum data retention in the absence of external power.
  • Data is automatically protected during power loss.
  • Directly replaces 128K x 8 volatile static RAM.
  • Write protects selected blocks of memory when pro- grammed.
  • Unlimited write cycles.
  • Low.
  • power CMOS.
  • Read and write access times as fast as 70 ns.
  • Lithium energy source is electrically disconnected to retain freshness until power is applied for the first.

📥 Download Datasheet

Datasheet Details

Part number DS1645Y
Manufacturer Dallas Semiconducotr
File Size 102.17 KB
Description Partitionable 1024K NV SRAM
Datasheet download datasheet DS1645Y Datasheet

Full PDF Text Transcription for DS1645Y (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DS1645Y. For precise diagrams, and layout, please refer to the original PDF.

DS1645Y/AB DS1645Y/AB Partitionable 1024K NV SRAM FEATURES • 10 years minimum data retention in the absence of external power • Data is automatically protected during pow...

View more extracted text
absence of external power • Data is automatically protected during power loss • Directly replaces 128K x 8 volatile static RAM • Write protects selected blocks of memory when pro- grammed • Unlimited write cycles • Low–power CMOS • Read and write access times as fast as 70 ns • Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time • Full +10% VCC operating range (DS1645Y) • Optional +5% VCC operating range (DS1645AB) • Optional industrial temperature range of –40°C to +85°C, designated IND • JEDEC standard 32–pin DIP package • Low Profile Module (LPM) package – Fit