Download the DS1645AB datasheet PDF.
This datasheet also covers the DS1645Y variant, as both devices belong to the same partitionable 1024k nv sram family and are provided as variant models within a single manufacturer datasheet.
Key Features
10 years minimum data retention in the absence of
external power.
Data is automatically protected during power loss.
Directly replaces 128K x 8 volatile static RAM.
Write protects selected blocks of memory when pro-
grammed.
Unlimited write cycles.
Low.
power CMOS.
Read and write access times as fast as 70 ns.
Lithium energy source is electrically disconnected to
retain freshness until power is applied for the first.
Full PDF Text Transcription for DS1645AB (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
DS1645AB. For precise diagrams, and layout, please refer to the original PDF.
DS1645Y/AB DS1645Y/AB Partitionable 1024K NV SRAM FEATURES • 10 years minimum data retention in the absence of external power • Data is automatically protected during pow...
View more extracted text
absence of external power • Data is automatically protected during power loss • Directly replaces 128K x 8 volatile static RAM • Write protects selected blocks of memory when pro- grammed • Unlimited write cycles • Low–power CMOS • Read and write access times as fast as 70 ns • Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time • Full +10% VCC operating range (DS1645Y) • Optional +5% VCC operating range (DS1645AB) • Optional industrial temperature range of –40°C to +85°C, designated IND • JEDEC standard 32–pin DIP package • Low Profile Module (LPM) package – Fit
DS1645AB Datasheet
