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DMTH6006SPSW - N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Synchronous rectifiers DC-DC converters Power management Mechanical Data Pack

Key Features

  • Rated to +175°C.
  • Ideal for High Ambient Temperature Environments.
  • 100% Unclamped Inductive Switching (UIS) Test in Production.
  • Ensures More Reliable and Robust End.

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Other Datasheets by Diodes Incorporated

Part Number Description
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DMTH6004SCTB N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMTH6006SPSW Green 60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 60V RDS(ON) MAX 6.2mΩ @ VGS = 10V ID MAX TC = +25°C 100A Features • Rated to +175°C — Ideal for High Ambient Temperature Environments • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application • High Conversion Efficiency • Low RDS(ON) – Minimizes On-State Losses • Low Input Capacitance • Fast Switching Speed • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications requiring specific change control (i.e.