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DMTH6004LPSW - N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Primary switches in isolated DC-DC Synchronous rectifiers Load switches

Key Features

  • Rated to +175°C.
  • Ideal for High Ambient Temperature Environments.
  • 100% Unclamped Inductive Switching (UIS) Test in Production.
  • Ensures More Reliable and Robust End.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMTH6004LPSW Green 60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 60V RDS(ON) Max 3.1mΩ @VGS = 10V 4.5mΩ @VGS = 4.5V ID TC = +25°C (Note 5) 100A 100A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.