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DMTH6006LPSW - 60V N-Channel MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Engine Management Systems Body Control Electronics DC-DC Converters Mechanical Da

Key Features

  • Rated to +175°C.
  • Ideal for High Ambient Temperature Environments.
  • 100% Unclamped Inductive Switching(UIS) Test in Production.
  • Ensures More Reliable and Robust End.

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Other Datasheets by Diodes Incorporated

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Summary BVDSS 60V RDS(ON) MAX 6.5mΩ @ VGS = 10V 10mΩ @ VGS = 4.5V ID MAX TC = +25°C (Note 9) 100A 81.6A DMTH6006LPSW Green 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Features  Rated to +175°C—Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switching(UIS) Test in Production— Ensures More Reliable and Robust End Application  Low RDS(ON)—Minimizes On State Losses  Low Input Capacitance  Fast Switching Speed  Wettable Flank for Improved Optical Inspection  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.