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BTD5510F3 - NPN Planar Transistor

Description

The BTD5510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application.

Features

  • High BVCEO.
  • Low VCE(SAT).
  • High current gain.
  • Monolithic construction with built-in base-emitter shunt resistors.
  • Pb-free lead plating package Equivalent Circuit BTD5510F3 B R1≈4k R2≈60 C E B：Base C：Collector E：Emitter Outline TO-263 BCE Ordering Information Device BTD5510F3-0-T7-X Package Shipping TO-263 (Pb-free lead plating and RoHS compliant package) 800 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for R.

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Datasheet Details

Part number BTD5510F3
Manufacturer Cystech
File Size 304.79 KB
Description NPN Planar Transistor
Datasheet download datasheet BTD5510F3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTD5510F3 Spec. No. : C658F3 Issued Date : 2005.08.23 Revised Date :2015.09.04 Page No. : 1/7 Description The BTD5510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application.
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