Click to expand full text
CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BTD5213M3
Spec. No. : C307M3 Issued Date : 2007.01.10 Revised Date : 2014.01.23 Page No. : 1/7
Features
• High VCEO, VCEO=100V • High IC, IC(DC)=1A • Low VCE(sat) • Good current gain linearity • Complementary to BTB1260M3 • Pb-free lead plating and halogen-free package
Symbol
BTD5213M3
Outline
SOT-89
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse)
Symbol
VCBO VCEO VEBO
IC ICP
Power Dissipation
Pd
Thermal Resistance, Junction to Ambient
RθJA
Junction Temperature
Tj
Storage Temperature
Tstg
Note : 1. Single Pulse Pw≦350μs, Duty≦2%.
2.
BTD5213M3 Datasheet
