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BTD5213J3 - General Purpose NPN Epitaxial Planar Transistor

Features

  • Low collector saturation voltage.
  • High breakdown voltage, VCEO=100V (min. ).
  • High collector current, IC(max)=1A (DC).
  • Pb-free lead plating and halogen-free package Symbol BTD5213J3 Outline TO-252(DPAK) B：Base C：Collector E：Emitter B CE Ordering Information Device BTD5213J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS complia.

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Datasheet Details

Part number BTD5213J3
Manufacturer Cystech
File Size 319.30 KB
Description General Purpose NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD5213J3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTD5213J3 Spec. No. : C304J3 Issued Date : 2010.12.06 Revised Date : 2015.04.30 Page No. : 1/7 Features • Low collector saturation voltage • High breakdown voltage, VCEO=100V (min.
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