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CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD965N3
Spec. No. : C847N3 Issued Date : 2003.07.02 Revised Date :2015.02.12 Page No. : 1/6
Features
• Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics • Complementary to BTB1386N3 • Pb-free lead plating and halogen-free package
Symbol
BTD965N3
Outline
SOT-23
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction Temperature Range Storage Temperature Range
Note : Single Pulse Pw≦350μs, Duty≦2%.
BTD965N3 Datasheet
