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CYStech Electronics Corp.
Spec. No. : C847A3 Issued Date : 2003.04.01 Revised Date :2011.02.14 Page No. : 1/6
Low Vcesat NPN Epitaxial Planar Transistor
BTD965A3
BVCEO IC RCESAT(typ)
20V 5A 0.12Ω
Features
• Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics • Complementary to BTB1386A3 • Pb-free package
Symbol
BTD965A3
Outline
TO-92
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature
Note : *1. Single Pulse Pw≦300us,Duty≦2%.
Symbol
VCBO VCEO VEBO
IC ICP Pd Tj Tstg
BTD965A3
ECB
Limits
60 20 7 5 8 *1 0.
BTD965A3 Datasheet
