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BTD9065D3 - NPN Planar Transistor

Features

  • Low VCE(sat), VCE(sat)=0.65 V (typical), at IC / IB = 4A / 0.1A.
  • Excellent current gain characteristics.
  • Pb-free lead plating package Symbol BTD9065D3 Outline TO-126ML B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation(TA=25℃) Power Dissipation(TC=25℃) Junction Temperature Storage T.

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Datasheet Details

Part number BTD9065D3
Manufacturer Cystech Electonics
File Size 188.02 KB
Description NPN Planar Transistor
Datasheet download datasheet BTD9065D3 Datasheet

Full PDF Text Transcription

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD9065D3 BVCEO IC RCESAT Spec. No. : C847D3 Issued Date : 2011.03.25 Revised Date : Page No. : 1/5 20V 5A 160mΩ(typ.) Features • Low VCE(sat), VCE(sat)=0.65 V (typical), at IC / IB = 4A / 0.1A • Excellent current gain characteristics • Pb-free lead plating package Symbol BTD9065D3 Outline TO-126ML B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation(TA=25℃) Power Dissipation(TC=25℃) Junction Temperature Storage Temperature Note : *1. Single Pulse , Pw≦380μs,Duty≦2%.
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