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CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD9065D3
BVCEO IC RCESAT
Spec. No. : C847D3 Issued Date : 2011.03.25 Revised Date : Page No. : 1/5
20V 5A 160mΩ(typ.)
Features
• Low VCE(sat), VCE(sat)=0.65 V (typical), at IC / IB = 4A / 0.1A • Excellent current gain characteristics • Pb-free lead plating package
Symbol
BTD9065D3
Outline
TO-126ML
B:Base C:Collector E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation(TA=25℃) Power Dissipation(TC=25℃)
Junction Temperature Storage Temperature
Note : *1. Single Pulse , Pw≦380μs,Duty≦2%.