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CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C848I3 Issued Date : 2003.04.18 Revised Date : 2004.06.30 Page No. : 1/4
BTD1864I3
Features
• Low VCE(sat) • Excellent current gain characteristics • Complementary to BTB1243I3
Symbol
BTD1864I3
Outline
TO-251
B：Base C：Collector E：Emitter
B CCE B
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw=10ms Symbol VCBO VCES VCEO VEBO IC(DC) IC(Pulse) Pd(TA=25℃) Pd(TC=25℃) Tj Tstg Limits 80 80 50 6 5 7.5 1 15 150 -55~+150 Unit V V V V *1 A W °C °C
BTD1864I3
CYStek Product Specification
CYStech Electronics Corp.
BTD1864I3 Datasheet
