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BTD1862I3 - NPN Epitaxial Planar Transistor

Features

  • Low VCE(sat), VCE(sat)=0.4 V (typical), at IC / IB = 2A / 0.5A.
  • Excellent current gain characteristics.
  • Complementary to BTB1240I3 Symbol BTD1862I3 Outline TO-251 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Note : Sin.

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Datasheet Details

Part number BTD1862I3
Manufacturer Cystech Electonics
File Size 146.40 KB
Description NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD1862I3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C842I3 Issued Date : 2003.07.02 Revised Date : Page No. : 1/4 BTD1862I3 Features • Low VCE(sat), VCE(sat)=0.4 V (typical), at IC / IB = 2A / 0.
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