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CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C849I3 Issued Date : 2003.04.18 Revised Date : Page No. : 1/4
BTD1864AI3
Features
• Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB1243AI3
Symbol
BTD1864AI3
Outline
TO-251
B：Base C：Collector E：Emitter B
C
E
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
Note : *1.
BTD1864AI3 Datasheet
