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CY15B128J - 128-Kbit (16K x 8) Automotive Serial (I2C) F-RAM

Description

The CY15B128J is a 128-Kbit nonvolatile memory employing an advanced ferroelectric process.

An F-RAM is nonvolatile and performs reads and writes similar to a RAM.

Features

  • 128-Kbit ferroelectric random access memory (F-RAM) logically organized as 16K × 8.
  • High-endurance 100 trillion (1014) read/writes.
  • 151-year data retention (See the Data Retention and Endurance table).
  • NoDelay™ writes.
  • Advanced high-reliability ferroelectric process.
  • Fast two-wire serial interface (I2C).
  • Up to 3.4-MHz frequency[1].
  • Direct hardware replacement for serial EEPROM.
  • Supports legacy timings for 100 kHz and 400 kHz.
  • Device ID.
  • Man.

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Datasheet preview – CY15B128J

Datasheet Details

Part number CY15B128J
Manufacturer Cypress
File Size 902.68 KB
Description 128-Kbit (16K x 8) Automotive Serial (I2C) F-RAM
Datasheet download datasheet CY15B128J Datasheet
Additional preview pages of the CY15B128J datasheet.

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Full PDF Text Transcription

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CY15B128J 128-Kbit (16K × 8) Automotive Serial (I2C) F-RAM 128-Kbit (16K × 8) Automotive Serial (I2C) F-RAM Features ■ 128-Kbit ferroelectric random access memory (F-RAM) logically organized as 16K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Fast two-wire serial interface (I2C) ❐ Up to 3.4-MHz frequency[1] ❐ Direct hardware replacement for serial EEPROM ❐ Supports legacy timings for 100 kHz and 400 kHz ■ Device ID ❐ Manufacturer ID and Product ID ■ Low power consumption ❐ 175-A active current at 100 kHz ❐ 150-A standby current ❐ 8-A sleep mode current ■ Low-voltage operation: VDD = 2.0 V to 3.
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