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CY15B101N - 1-Mbit (64K x 16) Automotive F-RAM Memory

Features

  • 1-Mbit ferroelectric random access memory (F-RAM™) logically organized as 64K × 16.
  • Configurable as 128K × 8 using UB and LB.
  • High-endurance 100 trillion (1014) read/writes.
  • 151-year data retention (see the Data Retention and Endurance table).
  • NoDelay™ writes.
  • Page-mode operation for 30-ns cycle time.
  • Advanced high-reliability ferroelectric process.
  • SRAM compatible.
  • Industry-standard 64K × 16 SRAM pinout.
  • 60-ns access time, 90-ns cycle time.

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Datasheet Details

Part number CY15B101N
Manufacturer Cypress Semiconductor
File Size 386.63 KB
Description 1-Mbit (64K x 16) Automotive F-RAM Memory
Datasheet download datasheet CY15B101N Datasheet
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Full PDF Text Transcription

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CY15B101N 1-Mbit (64K × 16) Automotive F-RAM Memory 1-Mbit (64K × 16) Automotive F-RAM Memory Features ■ 1-Mbit ferroelectric random access memory (F-RAM™) logically organized as 64K × 16 ❐ Configurable as 128K × 8 using UB and LB ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (see the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Page-mode operation for 30-ns cycle time ❐ Advanced high-reliability ferroelectric process ■ SRAM compatible ❐ Industry-standard 64K × 16 SRAM pinout ❐ 60-ns access time, 90-ns cycle time ■ Superior to battery-backed SRAM modules ❐ No battery concerns ❐ Monolithic reliability ❐ True surface-mount solution, no rework steps ❐ Superior for moisture, shock, and vibration ■ Low power consumption ❐ Active current 7 mA (typ) ❐ Stan
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