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S34ML08G2 - x8 I/O and 3 V VCC NAND Flash Memory

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S34ML08G2 8 Gb, 4-bit ECC, x8 I/O and 3 V VCC NAND Flash Memory for Embedded Distinctive Characteristics  Density – 8 Gb (4 Gb x 2)  Architecture (For each 4 Gb device) – Input / Output Bus Width: 8-bits – Page Size: (2048 + 128) bytes; 128-byte spare area – Block Size: 64 Pages or (128k + 8k) bytes – Plane Size – 2048 Blocks per Plane or (256M + 16M) bytes – Device Size – 2 Planes per Device or 512 Mbyte  NAND Flash Interface – Open NAND Flash Interface (ONFI) 1.0 compliant – Address, Data and Commands multiplexed  Supply Voltage – 3.3V device: Vcc = 2.7V ~ 3.6V Performance  Page Read / Program – Random access: 30 µs (Max) – Sequential access: 25 ns (Min) – Program time / Multiplane Program time: 300 µs (Typ)  Block Erase / Multiplane Erase – Block Erase time: 3.
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