Datasheet4U Logo Datasheet4U.com

S34ML04G3 - SLC NAND Flash Memory

Description

2.

3.

Features

  • Multiplane Program and Erase commands.
  • Copy Back Program.
  • Multiplane Copy Back Program.
  • Reset (FFh) command is required after power-on as a first command Performance.
  • Page Read / Program.
  • Read Page Time (tR):.
  • 45 µs (Typ) / Single Plan.
  • 55 µs (Typ) / Multi Plane.
  • Program time / Multiplane Program time: 350 µs (Typ).
  • Block Erase / Multiplane Erase.
  • Block Erase time: 4 ms (Typ).
  • Reliability.
  • 60,000 Progra.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
S34ML04G1 3V SLC NAND Flash Cypress Semiconductor
S34ML04G1 (S34ML01G1 - S34ML04G1) SLC NAND Flash Memory Spansion
S34ML04G2 NAND Flash Memory Cypress Semiconductor
S34ML01G1 3V SLC NAND Flash Cypress Semiconductor
S34ML01G1 (S34ML01G1 - S34ML04G1) SLC NAND Flash Memory Spansion

Other Datasheets by Cypress (Infineon)

Part Number Description

Full PDF Text Transcription

Click to expand full text
ADVANCE S34ML04G3 4 Gb, 3 V, 1-bit ECC, 2K Page Size, SLC NAND Flash Memory for Embedded Distinctive Characteristics  Density ❐ 4 Gb  Architecture ❐ Input / Output Bus Width: 8 bits ❐ Page Size • 4 Gb: (2048 + 128) bytes; 128-byte spare area ❐ Block Size: 64 Pages • 4 Gb: 128 KB + 8 KB ❐ Plane Size • 4 Gb: 2048 blocks per plane or (256 MB + 16 MB) ❐ Device Size • 4 Gb: 2 planes per device or 512 Mbyte  NAND Flash Interface ❐ Open NAND Flash Interface (ONFI) 1.0 compliant ❐ Address, Data, and Commands multiplexed  Supply voltage ❐ 3.3-V device: VCC = 2.7 V ~ 3.
Published: |