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S34ML04G1 - 3V SLC NAND Flash

Download the S34ML04G1 datasheet PDF. This datasheet also covers the S34ML01G1 variant, as both devices belong to the same 3v slc nand flash family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (S34ML01G1-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
S34ML04G1 (S34ML01G1 - S34ML04G1) SLC NAND Flash Memory Spansion
S34ML04G3 SLC NAND Flash Memory Cypress
S34ML01G1 (S34ML01G1 - S34ML04G1) SLC NAND Flash Memory Spansion
S34ML02G1 (S34ML01G1 - S34ML04G1) SLC NAND Flash Memory Spansion
S34 Silicon Power Rectifier Microsemi Corporation

Other Datasheets by Cypress (Infineon)

Part Number Description
S34ML04G2 NAND Flash Memory
S34ML01G1 3V SLC NAND Flash
S34ML01G2 NAND Flash Memory
S34ML02G1 3V SLC NAND Flash
S34ML02G2 NAND Flash Memory

Full PDF Text Transcription

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Distinctive Characteristics  Density – 1 Gb/ 2 Gb / 4 Gb  Architecture – Input / Output Bus Width: 8-bits / 16-bits – Page size: – x8 = 2112 (2048 + 64) bytes; 64 bytes is spare area – x16 = 1056 (1024 + 32) words; 32 words is spare area – Block size: 64 Pages – x8 = 128 KB + 4 KB – x16 = 64k + 2k words – Plane size: – 1 Gb / 2 Gb: 1024 Blocks per Plane x8 = 128 MB + 4 MB x16 = 64M + 2M words – 4 Gb: 2048 Blocks per Plane x8 = 256 MB+ 8 MB x16 = 128M + 4M words – Device size: – 1 Gb: 1 Plane per Device or 128 MB – 2 Gb: 2 Planes per Device or 256 MB – 4 Gb: 2 Planes per Device or 512 MB Performance  Page Read / Program – Random access: 25 µs (Max) – Sequential access: 25 ns (Min) – Program time / Multiplane Program time: 200 µs (Typ)  Block Erase (S34ML01G1) – Block Erase time: 2.
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