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S34ML08G1 - NAND Flash Memory

Description

The Cypress S34ML08G1 8-Gb NAND is offered in 3.3 VCC with x8 I/O interface.

This document contains information for the S34ML08G1 device, which is a dual-die stack of two S34ML04G1 die.

For detailed specifications, please refer to the discrete die datasheet: S34ML04G1.

Features

  • Supports Multiplane Program and Erase commands.
  • Supports Copy Back Program.
  • Supports Multiplane Copy Back Program.
  • Supports Read Cache.
  • Electronic Signature.
  • Manufacturer ID: 01h.
  • Operating Temperature.
  • Industrial: 40 °C to 85 °C.
  • Automotive: 40 °C to 105 °C Performance.
  • Page Read / Program.
  • Random access: 25 µs (Max).
  • Sequential access: 25 ns (Min).
  • Program time / Multiplane Program tim.

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S34ML08G1 8 Gb, 1-bit ECC, Flash ×8 I/O, 3 Memory fVorVECmC,bNedAdNeDd General Description The Cypress S34ML08G1 8-Gb NAND is offered in 3.3 VCC with x8 I/O interface. This document contains information for the S34ML08G1 device, which is a dual-die stack of two S34ML04G1 die. For detailed specifications, please refer to the discrete die datasheet: S34ML04G1. Distinctive Characteristics  Density – 8 Gb (4 Gb  2)  Architecture (For each 4 Gb device) – Input / Output Bus Width: 8-bits – Page Size: (2048 + 64) bytes; 64 bytes is spare area – Block Size: 64 Pages or (128k + 4k) bytes – Plane Size – 2048 Blocks per Plane or (256M + 8M) bytes – Device Size – 2 Planes per Device or 512 Mbyte  NAND Flash Interface – Open NAND Flash Interface (ONFI) 1.
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