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CY7C1021CV33
64K x 16 Static RAM
Features
• Pin- and function-compatible with CY7C1021BV33 • High speed — tAA = 8, 10, 12, and 15 ns • CMOS for optimum speed/power • Low active power — 360 mW (max.) • Data retention at 2.0V • Automatic power-down when deselected • Independent control of upper and lower bits • Available in 44-pin TSOP II, 400-mil SOJ, 48-ball FBGA (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0 through A15). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O9 through I/O16) is written into the location specified on the address pins (A0 through A15). Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH.