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CY7C1021CV26 - 1-Mbit (64K x 16) Static RAM

Description

of Read and Write modes.

The input/output pins (I/O1 through I/O16) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a Write operation (CE LOW, and WE LOW).

Features

  • Temperature Range.
  • Automotive:.
  • 40°C to 125°C.
  • High speed.
  • tAA = 15 ns.
  • Optimized voltage range: 2.5V.
  • 2.7V.
  • Low active power: 360 mW (max. ).
  • Automatic power-down when deselected.
  • Independent control of upper and lower bits.
  • CMOS for optimum speed/power.
  • Package offered: 44-pin TSOP II Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte.

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( DataSheet : www.DataSheet4U.com ) CY7C1021CV26 1-Mbit (64K x 16) Static RAM Features • Temperature Range — Automotive: –40°C to 125°C • High speed — tAA = 15 ns • Optimized voltage range: 2.5V–2.7V • Low active power: 360 mW (max.) • Automatic power-down when deselected • Independent control of upper and lower bits • CMOS for optimum speed/power • Package offered: 44-pin TSOP II Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0 through A15). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O9 through I/O16) is written into the location specified on the address pins (A0 through A15).
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