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CY62158EV30 - 8M-Bit Static RAM

Description

The CY62158EV30 is a high performance CMOS static RAM organized as 1024K words by 8 bits.

Features

  • Very high speed: 45 ns.
  • Wide voltage range: 2.20 V.
  • 3.60 V.
  • Pin compatible with CY62158DV30.
  • Ultra low standby power.
  • Typical standby current: 2 A.
  • Maximum standby current: 8 A.
  • Ultra low active power.
  • Typical active current: 1.8 mA at f = 1 MHz.
  • Easy memory expansion with CE1, CE2, and OE features.
  • Automatic power down when deselected.
  • CMOS for optimum speed/power.
  • Offered in Pb-free 48-ball VFBGA and 44-pin TSOP II packages.

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Full PDF Text Transcription

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CY62158EV30 MoBL® 8-Mbit (1024 K × 8) Static RAM 8-Mbit (1024 K × 8) Static RAM Features ■ Very high speed: 45 ns ❐ Wide voltage range: 2.20 V–3.60 V ■ Pin compatible with CY62158DV30 ■ Ultra low standby power ❐ Typical standby current: 2 A ❐ Maximum standby current: 8 A ■ Ultra low active power ❐ Typical active current: 1.8 mA at f = 1 MHz ■ Easy memory expansion with CE1, CE2, and OE features ■ Automatic power down when deselected ■ CMOS for optimum speed/power ■ Offered in Pb-free 48-ball VFBGA and 44-pin TSOP II packages Functional Description The CY62158EV30 is a high performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra low active current.
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