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CY62158CV30 - (CY62158CV25 - CY62158CV33) 1024K x 8 MoBL Static RAM

Download the CY62158CV30 datasheet PDF. This datasheet also covers the CY62158CV25 variant, as both devices belong to the same (cy62158cv25 - cy62158cv33) 1024k x 8 mobl static ram family and are provided as variant models within a single manufacturer datasheet.

Description

The CY62158CV25/30/33 are high-performance CMOS static RAMs organized as 1024K words by 8 bits.

Features

  • High Speed.
  • 55 ns and 70 ns availability.
  • Voltage range:.
  • CY62158CV25: 2.2V.
  • 2.7V.
  • CY62158CV30: 2.7V.
  • 3.3V.
  • CY62158CV33: 3.0V.
  • 3.6V.
  • Ultra low active power.
  • Typical active current: 1.5 mA @ f = 1 MHz.
  • Typical active current: 5.5 mA @ f = fmax(70 ns speed) Low standby power Easy memory expansion with CE1, CE2 and OE features Automatic power-down when desel.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY62158CV25_CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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www.DataSheet4U.com CY62158CV25/30/33 MoBL™ 1024K x 8 MoBL Static RAM Features • High Speed — 55 ns and 70 ns availability • Voltage range: — CY62158CV25: 2.2V–2.7V — CY62158CV30: 2.7V–3.3V — CY62158CV33: 3.0V–3.6V • Ultra low active power — Typical active current: 1.5 mA @ f = 1 MHz • • • • — Typical active current: 5.5 mA @ f = fmax(70 ns speed) Low standby power Easy memory expansion with CE1, CE2 and OE features Automatic power-down when deselected CMOS for optimum speed/power in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling.
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