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CY62157EV18 - 8-Mbit (512 K x 16) Static RAM

Description

The CY62157EV18 is a high performance CMOS static RAM organized as 512K words by 16 bits.

Features

  • Very high speed: 55 ns.
  • Wide voltage range: 1.65 V.
  • 2.25 V.
  • Pin compatible with CY62157DV18 and CY62157DV20.
  • Ultra low standby power.
  • Typical Standby current: 2 A.
  • Maximum Standby current: 8 A.
  • Ultra low active power.
  • Typical active current: 6 mA at f = 1 MHz.
  • Easy memory expansion with CE1, CE2 and OE features.
  • Automatic power down when deselected.
  • Complementary metal oxide semiconductor (CMOS) for optimum speed and power.
  • Av.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY62157EV18 MoBL 8-Mbit (512K × 16) Static RAM 8-bit (512K x 16) Static RAM Features ■ Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A ❐ Maximum Standby current: 8 A ■ Ultra low active power ❐ Typical active current: 6 mA at f = 1 MHz ■ Easy memory expansion with CE1, CE2 and OE features ■ Automatic power down when deselected ■ Complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Available in Pb-free 48-ball very fine-pitch ball grid array (VFBGA) package Functional Description The CY62157EV18 is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current.
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