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CY62157ESL - 8-Mbit (512 K x 16) Static RAM

Description

of read and write modes.

The CY62157ESL is a high performance CMOS static RAM organized as 512K words by 16 bits.

Features

  • Very high speed: 45 ns Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V Ultra low standby power.
  • Typical Standby current: 2 A.
  • Maximum Standby current: 8 A Ultra low active power.
  • Typical active current: 1.8 mA at f = 1 MHz Easy memory expansion with CE and OE features Automatic power down when deselected Complementary metal oxide semiconductor (CMOS) for optimum speed and power Available in Pb-free 44-pin thin small outline package (TSOP) II package.

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Other Datasheets by Cypress (Infineon)

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY62157ESL MoBL 8-Mbit (512K x 16) Static RAM Features ■ ■ ■ Very high speed: 45 ns Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V Ultra low standby power ❐ Typical Standby current: 2 A ❐ Maximum Standby current: 8 A Ultra low active power ❐ Typical active current: 1.8 mA at f = 1 MHz Easy memory expansion with CE and OE features Automatic power down when deselected Complementary metal oxide semiconductor (CMOS) for optimum speed and power Available in Pb-free 44-pin thin small outline package (TSOP) II package ■ applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (CE HIGH or both BHE and BLE are HIGH).
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