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CY62147GN/CY621472GN MoBL®
4-Mbit (256K words × 16 bit) Static RAM
4-Mbit (256K words × 16 bit) Static RAM
Features
■ High speed: 45 ns/55 ns ■ Ultra-low standby power
❐ Typical standby current: 3.5 A ❐ Maximum standby current: 8.7 A ■ Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V ■ 1.0-V data retention ■ TTL-compatible inputs and outputs ■ Pb-free 48-ball VFBGA and 44-pin TSOP II packages
Functional Description
CY62147GN and CY621472GN are high-performance CMOS low-power (MoBL) SRAM devices organized as 256K Words by 16-bits. Both devices are offered in single and dual chip enable options and in multiple pin configurations.
Devices with a single chip enable input are accessed by asserting the chip enable (CE) input LOW.
CY62147GN Datasheet
