Datasheet4U Logo Datasheet4U.com

CY62147GE - 4-Mbit (256K words x 16 bit) Static RAM

Download the CY62147GE datasheet PDF. This datasheet also covers the CY62147G variant, as both devices belong to the same 4-mbit (256k words x 16 bit) static ram family and are provided as variant models within a single manufacturer datasheet.

Description

CY62147G and CY62147GE are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC.

Both devices are offered in single and dual chip enable options and in multiple pin configurations.

Features

  • High speed: 45 ns/55 ns.
  • Ultra-low standby power.
  • Typical standby current: 3.5 A.
  • Maximum standby current: 8.7 A.
  • Embedded ECC for single-bit error correction[1, 2].
  • Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V.
  • 1.0-V data retention.
  • TTL-compatible inputs and outputs.
  • Error indication (ERR) pin to indicate 1-bit error detection and correction.
  • Pb-free 48-ball VFBGA and 44-pin TSOP II packages Functional.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY62147G-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
CY62146DV30 4M Bit Static RAM Cypress
CY62146G 4-Mbit (256K words x 16 bit) Static RAM Cypress
CY62146G-MoBL 4-Mbit (256K words x 16 bit) Static RAM Cypress
CY62146GE 4-Mbit (256K words x 16 bit) Static RAM Cypress
CY62146GESL 4-Mbit (256K words x 16 bit) Static RAM Cypress

Other Datasheets by Cypress (Infineon)

Part Number Description
CY62147GE 4-Mbit (256K words x 16 bit) Static RAM
CY62147GE18 4-Mbit (256K words x 16 bit) Static RAM
CY62147GE30 4-Mbit (256K words x 16 bit) Static RAM
CY62147G 4-Mbit (256K words x 16 bit) Static RAM
CY62147G18 4-Mbit (256K words x 16 bit) Static RAM

Full PDF Text Transcription

Click to expand full text
CY62147G/CY621472G CY62147GE MoBL® 4-Mbit (256K words × 16-bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (256K words × 16-bit) Static RAM with Error-Correcting Code (ECC) Features ■ High speed: 45 ns/55 ns ■ Ultra-low standby power ❐ Typical standby current: 3.5 A ❐ Maximum standby current: 8.7 A ■ Embedded ECC for single-bit error correction[1, 2] ■ Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V ■ 1.0-V data retention ■ TTL-compatible inputs and outputs ■ Error indication (ERR) pin to indicate 1-bit error detection and correction ■ Pb-free 48-ball VFBGA and 44-pin TSOP II packages Functional Description CY62147G and CY62147GE are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC.
Published: |