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CY62137FV18 - 2-Mbit (128K x 16) Static RAM

Description

of read and write modes.

For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines.

The CY62137FV18 is a high performance CMOS static RAM organized as 128K words by 16 bits.

Features

  • Very high speed: 55 ns Wide voltage range: 1.65 V.
  • 2.25 V Pin compatible with CY62137CV18 Ultra low standby power.
  • Typical standby current: 1 A.
  • Maximum standby current: 5 A Ultra low active power.
  • Typical active current: 1.6 mA @ f = 1 MHz Ultra low standby power Easy memory expansion with CE and OE features Automatic power down when deselected Complementary metal oxide semiconductor (CMOS) for optimum speed and power Byte power-down feature Av.

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Other Datasheets by Cypress (Infineon)

Part Number Description
CY62137FV30 2-Mbit (128K x 16) Static RAM
CY62137CV18 128K x 16 Static RAM
CY62137CV25 (CY62137CV25 / CY62137CV30 / CY62137CV33) 2M (128K x 16) Static RAM
CY62137CV30 (CY62137CV25 / CY62137CV30 / CY62137CV33) 2M (128K x 16) Static RAM
CY62137CV33 (CY62137CV25 / CY62137CV30 / CY62137CV33) 2M (128K x 16) Static RAM

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CY62137FV18 MoBL® 2-Mbit (128K x 16) Static RAM www.DataSheet4U.com Features ■ ■ ■ ■ Very high speed: 55 ns Wide voltage range: 1.65 V – 2.25 V Pin compatible with CY62137CV18 Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 5 A Ultra low active power ❐ Typical active current: 1.6 mA @ f = 1 MHz Ultra low standby power Easy memory expansion with CE and OE features Automatic power down when deselected Complementary metal oxide semiconductor (CMOS) for optimum speed and power Byte power-down feature Available in a Pb-free 48-Ball Very fine ball grid package (VFBGA) package ■ is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular telephones.
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