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CY62137CV25 - (CY62137CV25 / CY62137CV30 / CY62137CV33) 2M (128K x 16) Static RAM

Description

of read and write modes.

The CY62137CV25/30/33 and CY62137CV are high-performance CMOS static RAMs organized as 128K words by 16 bits.

These devices feature advanced circuit design to provide ultra-low active current.

Features

  • Very high speed: 55 ns and 70 ns.
  • Voltage range:.
  • CY62137CV25: 2.2V.
  • 2.7V.
  • CY62137CV30: 2.7V.
  • 3.3V.
  • CY62137CV33: 3.0V.
  • 3.6V.
  • CY62137CV: 2.7V.
  • 3.6V.
  • Pin-compatible with the CY62137V.
  • Ultra-low active power.
  • Typical active current: 1.5 mA @ f = 1 MHz.
  • Typical active current: 5.5 mA @ f = fmax (70-ns speed) Low and ultra-low standby power Easy memory expansion with CE and OE featur.

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Other Datasheets by Cypress (Infineon)

Part Number Description
CY62137CV18 128K x 16 Static RAM
CY62137CV30 (CY62137CV25 / CY62137CV30 / CY62137CV33) 2M (128K x 16) Static RAM
CY62137CV33 (CY62137CV25 / CY62137CV30 / CY62137CV33) 2M (128K x 16) Static RAM
CY62137EV30 2-Mbit (128K x 16) Static RAM
CY62137FV18 2-Mbit (128K x 16) Static RAM

Full PDF Text Transcription

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CY62137CV25/30/33 MoBL® CY62137CV MoBL® 2M (128K x 16) Static RAM Features • Very high speed: 55 ns and 70 ns • Voltage range: — CY62137CV25: 2.2V–2.7V — CY62137CV30: 2.7V–3.3V — CY62137CV33: 3.0V–3.6V — CY62137CV: 2.7V–3.6V • Pin-compatible with the CY62137V • Ultra-low active power — Typical active current: 1.5 mA @ f = 1 MHz — Typical active current: 5.5 mA @ f = fmax (70-ns speed) Low and ultra-low standby power Easy memory expansion with CE and OE features Automatic power-down when deselected CMOS for optimum speed/power Packages offered in a 48-ball FBGA Life™ (MoBL®) in portable applications such as cellular telephones. The devices also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling.
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