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NPN BDY57 – BDY58 SILICON TRANSISTORS, DIFFUSED MESA
The BDY57 and BDY58 are mounted in TO-3 metal package. LF Large Signal Power Amplification High Current Fast Switching. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCBO VEBO IC IB PTOT TJ TS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation @ TC = 25° Junction Temperature Storage Temperature
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Ratings
BDY57 BDY58 BDY57 BDY58
Value
80 125 120 160 10 25 6 175 -65 to +200
Unit
V V V A A W °C
THERMAL CHARACTERISTICS Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case
Value
1
Unit
°C/W
09/11/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.
BDY57 Datasheet
