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PE7309DS - P-Channel Enhancement Mode Power MOSFET

Download the PE7309DS datasheet PDF. This datasheet also covers the PE7309DS-ChipSourceTek variant, as both devices belong to the same p-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The PE7309DS uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = -30V, ID = -9A RDS(ON) < 21mΩ @ VGS=-10V RDS(ON) < 32mΩ @ VGS=-4.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PE7309DS-ChipSourceTek_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PE7309DS
Manufacturer ChipSourceTek
File Size 0.96 MB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE7309DS Datasheet

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Other Datasheets by ChipSourceTek

Part Number Description
PE7150M P-Channel Enhancement Mode Power MOSFET
PE7165G P-Channel Enhancement Mode Power MOSFET
PE7170G P-Channel Enhancement Mode Power MOSFET
PE7204A P-Channel Enhancement Mode Power MOSFET
PE7208F P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

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PE7309DS P-Channel Enhancement Mode Power MOSFET Description The PE7309DS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = -30V, ID = -9A RDS(ON) < 21mΩ @ VGS=-10V RDS(ON) < 32mΩ @ VGS=-4.
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