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PE7165G - P-Channel Enhancement Mode Power MOSFET

Description

The PE7165G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = -18V, ID = -65A RDS(ON) < 4mΩ @ VGS=-4.5V RDS(ON) < 5.6mΩ @ VGS=-2.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number PE7165G
Manufacturer ChipSourceTek
File Size 1.02 MB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE7165G Datasheet

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Full PDF Text Transcription

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P-Channel Enhancement Mode Power MOSFET Description The PE7165G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PE7165G General Features ● VDS = -18V, ID = -65A RDS(ON) < 4mΩ @ VGS=-4.5V RDS(ON) < 5.6mΩ @ VGS=-2.
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