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P-Channel Enhancement Mode Power MOSFET
Description
The PE7209M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
PE7209M
General Features
● VDS = -20V, ID = -25A
RDS(ON) < 16mΩ @ VGS=-4.5V RDS(ON) < 22mΩ @ VGS=-2.5V
Schematic diagram
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
● PWM applications
● Load switch
k ● Power management
● Battery protection
Marking and pin assignment
rceTe PDFN3.3x3.