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PE7290G - P-Channel Enhancement Mode Power MOSFET

Download the PE7290G datasheet PDF. This datasheet also covers the PE7290G-ChipSourceTek variant, as both devices belong to the same p-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The PE7290G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = -20V, ID = -90A RDS(ON) < 2.3mΩ @ VGS=-10V RDS(ON) < 2.5mΩ @ VGS=-4.5V RDS(ON) < 3.7mΩ @ VGS=-2.5V Schematic diagram.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PE7290G-ChipSourceTek_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PE7290G
Manufacturer ChipSourceTek
File Size 0.98 MB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE7290G Datasheet

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Other Datasheets by ChipSourceTek

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PE7204A P-Channel Enhancement Mode Power MOSFET
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Full PDF Text Transcription

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P-Channel Enhancement Mode Power MOSFET Description The PE7290G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PE7290G General Features ● VDS = -20V, ID = -90A RDS(ON) < 2.3mΩ @ VGS=-10V RDS(ON) < 2.5mΩ @ VGS=-4.5V RDS(ON) < 3.7mΩ @ VGS=-2.
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