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P-Channel Enhancement Mode Power MOSFET
Description
The PE7340G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
General Features
● VDS = -30V, ID = -50A
RDS(ON) < 11mΩ @ VGS=-10V RDS(ON) < 17mΩ @ VGS=-4.5V
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Application
● PWM applications ● Load switch ● Power management
PE7340G
Schematic diagram Marking and pin assignment
Absolute Maximum Ratings (TC=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃) Pulsed Drain Current (Note 1) Single Pulsed Avalanche Energy(L=0.