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N-Channel Enhancement Mode Power MOSFET
Deneral Features
VDS =60V，ID = 0.3A VGS= 5V RDS(ON)(Typ.)=1.3Ω VGS=10 V RDS(ON)(Typ.)=1Ω ESD Rating:HBM 2300V
MX2N7002
1.High power and current handing capability
Schematic diagram
2.Lead free product is acquired 3.Surface mount package
k Application 1.Direct logic-level interface: TTL/CMOS e 2.Drivers: relays, solenoids, lamps, hammers,display, T memories, transistors, etc. 3.Battery operated systems rce 4.Solid-state relays
D
7002
G
S
Marking and pin assignment
SOT-23 (TOP VIEW)
ipSou Absolute Maximum Ratings (TA=25℃ unless otherwise noted)
h Drain-Source Voltage CGate-Source Voltage
Parameter
Symbol VDS VGS
Limit
60 ±20
Unit
V V
TA =25℃
0.3
Continuous Drain Current (TJ =150℃)
ID
A
TA =100℃
0.
MX2N7002 Datasheet
