MX2301 - P-Channel Power MOSFET

ChipSourceTek

General Description

The MX2301 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS=-20V, ID=-3A RDS(ON)(Typ. )=110mΩ @ VGS=-2.5V RDS(ON)(Typ. )=85mΩ @ VGS=-4.5V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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MX2301 p-channel power mosfet by ChipSourceTek - Datasheet Preview

Datasheet Details

Part number	MX2301
Manufacturer	ChipSourceTek
File Size	670.39 KB
Description	P-Channel Power MOSFET
Datasheet	MX2301 Datasheet

Other Datasheets by ChipSourceTek

Part Number	Description
MX2301A	P-Channel Power MOSFET
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MX2300C	N-Channel Power MOSFET
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MX2319	P-Channel Enhancement Mode Power MOSFET
MX2120	Dual-cell lithium battery protection
MX2120CB	Dual-cell lithium battery protection
MX2210N	Single-cell lithium battery protection
MX2808	N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-Channel Enhancement Mode Power MOSFET MX2301 DESCRIPTION The MX2301 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES  VDS=-20V, ID=-3A RDS(ON)(Typ.)=110mΩ @ VGS=-2.5V RDS(ON)(Typ.)=85mΩ @ VGS=-4.