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MX2818 - N-Channel Power MOSFET

General Description

The MX2818 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

applications.

It is ESD protested..

Key Features

  • VDS =20V，ID =12A @VGS=-4.5V RDS(ON)(Typ. )=11mΩ Schematic diagram @VGS=-3.8V RDS(ON)(Typ. )=12mΩ @VGS=2.5V RDS(ON)(Typ. )=13mΩ ESD Rating:2000V HBM.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package k.

📥 Download Datasheet

Datasheet Details

Part number MX2818
Manufacturer ChipSourceTek
File Size 610.57 KB
Description N-Channel Power MOSFET
Datasheet download datasheet MX2818 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode Power MOSFET Description The MX2818 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications. It is ESD protested.. MX2818 General Features  VDS =20V，ID =12A @VGS=-4.5V RDS(ON)(Typ.)=11mΩ Schematic diagram @VGS=-3.8V RDS(ON)(Typ.)=12mΩ @VGS=2.5V RDS(ON)(Typ.