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MX2814 - N-Channel Enhancement Mode Power MOSFET

Download the MX2814 datasheet PDF. This datasheet also covers the MX2814-ChipSourceTek variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The MX2814 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

applications.

It is ESD protested..

Key Features

  • VDS =20V，ID =8A @VGS=4.5V RDS(ON)(Typ. )=11mΩ Schematic diagram @VGS=3.8V RDS(ON)(Typ. )=12.5mΩ @VGS=2.5V RDS(ON)(Typ. )=14mΩ ESD Rating:2000V HBM.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package k.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MX2814-ChipSourceTek_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MX2814
Manufacturer ChipSourceTek
File Size 635.91 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MX2814 Datasheet

Other Datasheets by ChipSourceTek

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel Enhancement Mode Power MOSFET Description The MX2814 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications. It is ESD protested.. MX2814 General Features  VDS =20V，ID =8A @VGS=4.5V RDS(ON)(Typ.)=11mΩ Schematic diagram @VGS=3.8V RDS(ON)(Typ.)=12.5mΩ @VGS=2.5V RDS(ON)(Typ.