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CEM9939 - Dual Enhancement Mode Field Effect Transistor(N and P Channel)

Download the CEM9939 datasheet PDF. This datasheet also covers the CEM9939_Chino variant, as both devices belong to the same dual enhancement mode field effect transistor(n and p channel) family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (CEM9939_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEM9939
Manufacturer Chino-Excel Technology
File Size 754.85 KB
Description Dual Enhancement Mode Field Effect Transistor(N and P Channel)
Datasheet download datasheet CEM9939 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CEM9939 N-Channel BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=250 A 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -25 0 25 50 75 100 125 150 ID=250 A 5 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variationwith Temperature VGS, Gate to Source Voltage (V) 13.0 20.0 9.0 7.0 5.0 VDS=15V 2.5 0 0 2 4 6 8 10 -ID, Drain Current (A) 11.0 10.0 5.0 1.0 0 0.3 0.6 0.9 1.2 1.5 IDS, Drain-Source Current (A) VDS, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Temperature Figure 8. Body Diode Forward VoltageVariation with Source Current 5-171 1.15 1.10 1.05 1.