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CEM9936A - Dual N-Channel MOSFET

Download the CEM9936A datasheet PDF. This datasheet also covers the CEM9936A-Chino variant, as both devices belong to the same dual n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 30V, 5.4A, RDS(ON) = 40mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 D1 7 D2 6 D2 5 5 SO-8 1 1 S1 2 G1 3 S2 4 G2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CEM9936A-Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEM9936A
Manufacturer Chino-Excel Technology
File Size 82.93 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet CEM9936A Datasheet

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Other Datasheets by Chino-Excel Technology

Part Number Description
CEM9936 Dual N-Channel Enhancement Mode Field Effect Transistor
CEM9935 Dual N-Channel Enhancement Mode Field Effect Transistor
CEM9935A Dual N-Channel Enhancement Mode Field Effect Transistor
CEM9939 Dual Enhancement Mode Field Effect Transistor(N and P Channel)
CEM9925 Dual N-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CEM9936A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 5.4A, RDS(ON) = 40mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 D1 7 D2 6 D2 5 5 SO-8 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 30 Units V V A A W C ±20 5.4 22 2.0 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units C/W 2003.July 5 - 241 http://www.