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CEM9935A - Dual N-Channel Enhancement Mode Field Effect Transistor

Download the CEM9935A datasheet PDF. This datasheet also covers the CEM9935A-Chino variant, as both devices belong to the same dual n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 20V, 6.0A, RDS(ON) = 36mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. RDS(ON) = 75mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 D1 D2 D2 876 5 5 SO-8 1 123 4 S1 G1 S2 G2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CEM9935A-Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEM9935A
Manufacturer Chino-Excel Technology
File Size 261.34 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEM9935A Datasheet

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Other Datasheets by Chino-Excel Technology

Part Number Description
CEM9935 Dual N-Channel Enhancement Mode Field Effect Transistor
CEM9936 Dual N-Channel Enhancement Mode Field Effect Transistor
CEM9936A Dual N-Channel MOSFET
CEM9939 Dual Enhancement Mode Field Effect Transistor(N and P Channel)
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CEM9935A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6.0A, RDS(ON) = 36mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. RDS(ON) = 75mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 D1 D2 D2 876 5 5 SO-8 1 123 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 20 VGS ±12 Drain Current-Continuous Drain Current-Pulsed a ID 6.0 IDM 24 Maximum Power Dissipation PD 2.0 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.