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2N3859A - SILICON NPN TRANSISTORS

Description

The CENTRAL SEMICONDUCTOR 2N3859A is a silicon NPN transistor designed for general purpose amplifier and switching applications.

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2N3859A SILICON NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3859A is a silicon NPN transistor designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation PD Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJA Thermal Resistance ΘJC 60 60 6.0 100 625 1.5 -65 to +150 200 83.3 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=60V IEBO VEB=6.0V BVCBO IC=100μA 60 BVCEO IC=1.
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