2N3811
DESCRIPTION
: The CENTRAL SEMICONDUCTOR 2N3811 and 2N3811A are dual silicon PNP transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications.
MARKING: FULL PART NUMBER
TO-78 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (One Die) Power Dissipation (Both Dice) Operating and Storage Junction Temperature
SYMBOL
VCBO VCEO VEBO
IC PD PD
TJ, Tstg
60 60 5.0 50 500 600 -65 to +200
UNITS V V V m A m W m W °C
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN MAX
UNITS
ICBO
VCB=50V
10 n A
IEBO
VEB=4.0V
20 n A
BVCBO
IC=10μA
BVCEO
IC=10m A
BVEBO
IE=10μA
VCE(SAT) IC=100μA, IB=10μA
0.20 V
VCE(SAT) IC=1.0m A, IB=100μA
0.25 V
VBE(SAT) IC=100μA, IB=10μA
0.70 V
VBE(SAT) IC=1.0m A,...
