2N3810
DESCRIPTION
: The CENTRAL SEMICONDUCTOR 2N3810 and 2N3810A are dual silicon PNP transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications.
MARKING: FULL PART NUMBER
TO-78 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (One Die) Power Dissipation (Both Dice) Operating and Storage Junction Temperature
SYMBOL
VCBO VCEO VEBO
IC PD PD
TJ, Tstg
60 60 5.0 50 500 600 -65 to +200
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
ICBO IEBO BVCBO BVCEO
VCB=50V VEB=4.0V IC=10μA IC=10m A
60 60
BVEBO VCE(SAT) VCE(SAT) VBE(SAT)
IE=10μA IC=100μA, IB=10μA IC=1.0m A, IB=100μA IC=100μA, IB=10μA
VBE(SAT) VBE(ON) h FE h FE
IC=1.0m A, IB=100μA VCE=5.0V, IC=100μA VCE=5.0V, IC=10μA VCE=5.0V, IC=100μA
100 150 h FE VCE=5.0V,...
