2N2369A
DESCRIPTION
: The CENTRAL SEMICONDUCTOR 2N2369A is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance
SYMBOL VCBO VCES VCEO VEBO IC ICM PD PD TJ, Tstg ΘJA ΘJC
40 40 15 4.5 200 500 360 1.2 -65 to +200 486 146
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
ICBO
VCB=20V
ICBO
VCB=20V, TA=150°C
BVCBO
IC=10μA
BVCES
IC=10μA
BVCEO
IC=10m A
BVEBO
IE=10μA
VCE(SAT) IC=10m A, IB=1.0m A
VCE(SAT) IC=10m A, IB=1.0m A, TA=125°C
VCE(SAT) IC=30m A, IB=3.0m A
VCE(SAT) IC=100m A, IB=10m A
VBE(SAT) IC=10m A, IB=1.0m A
VBE(SAT) IC=30m A, IB=3.0m...
