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BTD669J3 - General Purpose NPN Epitaxial Planar Transistor

Features

  • High breakdown voltage, BVCEO≥ 160V.
  • Large continuous collector current capability.
  • Low collector saturation voltage.
  • Pb-free lead plating and halogen-free package Symbol BTD669J3 Outline TO-252(DPAK) B：Base C：Collector E：Emitter B CE Ordering Information Device BTD669J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant.

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Datasheet Details

Part number BTD669J3
Manufacturer CYStech
File Size 324.71 KB
Description General Purpose NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD669J3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTD669J3 Spec. No. : C625J3 Issued Date : 2015.09.14 Revised Date : Page No.
Published: |