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BTD6055J3 - Low Vcesat NPN Epitaxial Planar Transistor

Features

  • Low VCE(SAT).
  • Low RCE(SAT), RCE(SAT)=50 mΩ(typically) at IC=5A.
  • Low operating collector voltage.
  • Excellent current gain characteristics at very low VCE.
  • Suitable for low dropout voltage.

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Datasheet Details

Part number BTD6055J3
Manufacturer CYStech
File Size 235.38 KB
Description Low Vcesat NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD6055J3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD6055J3 Spec. No. : C659J3 Issued Date : 2008.06.25 Revised Date : Page No.
Published: |